30F131 GT30F131 Panasonic B1JBDN000004

30F131/ GT30F131

Panasonic B1JBDN000004 IGBT
  • Brand : Toshiba™
    • VCES / Icp @3 μs : 360 V / 200 A
    • VCE(sat) (V) Typ. @120 A : 1.9
    • Insulated Gate Bipolar Transistor
    • Case Style: TO-263 (Surface Mount)