30F123 GT30F123 Toshiba IGBT

30F123/ GT30F123 IGBT Transistor

  • Brand : Toshiba™

Specifications:

  • Breakdown Voltage VCES (V) @Ta = 25˚C : 300V
  • IGBT Current Rating IC (A) @Ta = 25˚C : 200A
  • Insulated Gate Bipolar Transistor
  • Case Style: TO220F