RJP30H1 IGBT Transistor Surface Mount

RJP30H1 Insulated Gate Bipolar Transistor

• RJP30H1/ RJP30H1DPD
• Silicon N Channel IGBT
• 360V, 30A, 40W IGBT
• High speed power switching
• Case Style: TO-252 (Surface Mount)
• Price is Per One Transistor
• Marked RJP30H1 instead of RJP30H1DPD
• Condition : NEW
• Brand : ™