RJP30H1 IGBT Transistor Surface Mount

Ordering is temporarily paused.
Existing orders will still be fulfilled,
but for any new orders please check back after March 1st.
We will not be able to respond to new email inquiries at this time, but look forward to serving you soon.

RJP30H1 Insulated Gate Bipolar Transistor

• RJP30H1/ RJP30H1DPD
• Silicon N Channel IGBT
• 360V, 30A, 40W IGBT
• High speed power switching
• Case Style: TO-252 (Surface Mount)
• Price is Per One Transistor
• Marked RJP30H1 instead of RJP30H1DPD
• Condition : NEW
• Brand : ™


• Picture shown is for illustration purpose only.

    Related Products